Rachel Ruth Comroe's A Search for Evidence of the Radioactive Decomposition of PDF

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6. These high doping concentrations are commonly encountered in the diffused end regions of power devices. The performance of bipolar power devices is affected by the band gap narrowing phenomenon because the injection of minority carriers into the end regions is enhanced by the larger intrinsic carrier concentration. 00E+20 20 10 Doping Concentration (cm-3) Fig. 3 Built-in Potential The built-in potential of P–N junctions can play an important role in determining the operation and design of power semiconductor devices.

Baliga, “The MOS-Gated Emitter Switched Thyristor,” IEEE Electron Device Letters, Vol. EDL-11, pp. 75–77, 1990. J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors,” Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982. J. Baliga, “Silicon Carbide Power Devices,” World Scientific, Singapore, 2006. J. , “Gallium Arsenide Schottky Power Rectifiers,” IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985. 11 M. M. J. Baliga, “Silicon Carbide High Voltage (400V) Schottky Barrier Diodes,” IEEE Electron Device Letters, Vol.

The high voltage Schottky rectifier structure also contains a drift region, as shown in Fig. 9, which is designed to support the reverse blocking voltage. The resistance of the drift region increases rapidly with increasing blocking voltage capability, as discussed later in this chapter. Silicon Schottky rectifiers are commercially available with blocking voltages of up to 100 V. Beyond this value, the on-state voltage drop of silicon Schottky rectifiers becomes too large for practical applications.

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A Search for Evidence of the Radioactive Decomposition of Barium by Rachel Ruth Comroe


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